IGBT Modules 300A 1200V
Typical applications
·AC and DC electric motor control;
·Frequency transformer;
·UPS;
·Industry power supply;
·Electric welding machine.
Characteristics
·SPT chip (soft-punch-through);
·MOS input control;
·Ultra thin IGBT chip, great current,low loss, low tail current;
·Low VCE (sat) saturated voltage,positive temperature coefficient at high temperature;
·High switch frequency, low switch loss;
·High SC resistive ability;
·Module creepage long distance design;
·DBC insulated voltage above 2,500V RMS.
Maximum rated values
| Name |
Symbol |
Conditions |
values |
Unit |
| IGBT |
| Collector-emitter voltage |
VCES |
|
1200 |
V |
| DC-collector current |
IC |
TC=25(80)℃ |
450(300) |
A |
| repetitive peak voltage |
ICRM |
TC=25(80)℃, tp=1ms |
900(600)) |
A |
| gate-emitter peak voltage |
VGES |
|
+20 |
V |
| operation temperature |
Tvj |
|
-40~+150 |
℃ |
| storage temperature |
Tstg |
|
-40~+125 |
℃ |
| insulation test voltage |
VISOL |
RMS, 1min, 50Hz |
2500 |
V |
| Inverse diode |
| DC-forward current |
IF |
Tc=25(80)℃ |
450(300) |
A |
| repetitive peak forward voltage |
IFRM |
Tc=25(80)℃, tp=1ms |
900(600)) |
A |
| forward surge current |
IFSM |
tp=10ms, sin, Tj=125℃ |
2200 |
A |
Characteristic values
| Paramiter |
Symbol |
Conditions |
values |
IGBT |
| min. |
typ. |
max. |
| IGBT |
| gate threshold voltage |
VGE(th) |
VGE=VCE, lC=5mA,Tj=25℃ |
5 |
|
7 |
V |
| collector-emitter cut-off current |
ICES |
VGe=0V, Vce=VCES |
|
0.2 |
0.6 |
mA |
| gate-leakage current |
IGES |
VGE=0V, VGE=20V, Tj=25℃ |
-400 |
|
400 |
nA |
| On-state slope resistance |
rCE |
VGE=15V, Tj=25(125)℃ |
|
3(4) |
4(5) |
mΩ |
| collector-emitter saturation votage |
VCE(SAT) |
lC=300A,VGE=15V,chip parameters |
|
1.9(2.1) |
2.35 (2.55) |
V |
| input capacitance |
Cies |
VGE=0,VCE=25V,f=1MHZ |
|
26 |
|
nF |
| output capacitance |
Coes |
|
3 |
|
nF |
| Reverse transfer capacitance |
Cres |
|
3 |
|
nF |
| stray inductance module |
LCE |
|
|
|
20 |
nH |
| turen on delay time |
td (on) |
VCC=600V, lc=300A
Rgon=Rgoff=12Ω Tj=125℃,
VGE=+15V |
|
110 |
|
ns |
| rise time |
tr |
|
60 |
|
ns |
| turn off delay time |
td (off) |
|
800 |
|
ns |
| fall time |
tf |
|
60 |
|
ns |
| turn-on energy loss per pules |
Eon |
|
22 |
|
mj |
| turn-off energy loss per pulse |
Eoff |
|
22 |
|
mj |
| Reverse diode |
| forward voltage |
VF |
lF=180A,VGE=0,diF/dt=1800A/us
Tj=125℃,VR=600V |
|
2(1.8) |
|
V |
| peak reverse recovery current |
lRRM |
|
200 |
|
A |
| Reverse recovered time |
trr |
|
220 |
|
nS |
| Thermal properties |
| Thermal resistance, junction to case |
Rth(j-c) |
per IGBT |
|
0.06 |
|
K/W |
| Rth(j-c)D |
per inverse diode |
|
0.12 |
|
K/W |
| Thermal resistance, case to heat sink |
Rth(c-s) |
per module |
|
0.03 |
|
K/W |
| Mechanical properties |
| mounting torque |
M1 |
M6 |
3 |
|
6 |
NM |
| terminal connection tord |
M2 |
M5 |
2.5 |
|
5 |
NM |
| weight |
MAX |
|
324 |
|
|
g |
| Case color |
|
|
white |
|
|
K/W |
| Dimensions |
MAX |
|
107.5x62x31 |
|
|
mm |
Dimensions
 | |
|
