IGBT Modules 150A 1200V
Typical applications
·AC and DC electric motor control;
·Frequency transformer;
·UPS;
·Industry power supply;
·Electric welding machine.
Characteristics
·SPT chip (soft-punch-through);
·MOS input control;
·Ultra thin IGBT chip, great current,low loss, low tail current;
·Low VCE (sat) saturated voltage,positive temperature coefficient at high temperature;
·High switch frequency, low switch loss;
·High SC resistive ability;
·Module creepage long distance design;
·DBC insulated voltage above 2,500V RMS.
Maximum rated values
| Name |
Symbol |
Conditions |
values |
Unit |
| IGBT |
| Collector-emitter voltage |
VCES |
|
1200 |
V |
| DC-collector current |
IC |
Tc=25(80)℃ |
300(150) |
A |
| repetitive peak voltage |
ICRM |
Tc=25(80)℃, tp=1ms |
400(300) |
A |
| gate-emitter peak voltage |
VGES |
|
+20 |
V |
| operation temperature |
Tvj |
|
-40~+150 |
℃ |
| storage temperature |
Tstg |
|
-40~+125 |
℃ |
| insulation test voltage |
VISOL |
RMS, 1min, 50Hz |
2500 |
V |
| Inverse diode |
|
|
|
|
| DC-forward current |
IF |
Tc=25(80)℃ |
200(150) |
A |
| repetitive peak forward voltage |
IFRM |
Tc=25(80)℃, tp=1ms |
400(300) |
A |
| forward surge current |
IFSM |
tp=10ms, sin, Tj=125℃ |
1400 |
A |
Characteristic values
| Name |
symbol |
condition |
value |
unit |
| Min |
Typical |
Max. |
| IGBT |
| Gate-emitter threshold voltage |
VGE(th) |
VGE=VCE, Ic=4mA, Tj=25℃ |
5 |
|
7 |
V |
| Collector-emitter cut-off current |
ICES |
VGE=0V, VCE=VCES |
|
0.2 |
0.6 |
mA |
| Gate-emitter leakage current |
IGES |
VGE=0V, VGE=?0V, Tj=25℃ |
-400 |
|
400 |
nA |
| On-state slope resistance |
rCE |
VGE=15V, Tj=25(125)℃ |
|
6 (8) |
8 (10) |
m. |
| Collector-emitter saturation voltage |
VCE(SAT) |
IC=150A, VGE=15V, chip parameters |
|
1.9 (2.1) |
2.35 (2.55) |
V |
| Input capacitance |
Cies |
|
|
13 |
|
nF |
| Output capacitance |
Coes |
VGE=0, VCE=25V, f=1MHZ |
|
2 |
|
nF |
| Reverse transfer capacitance |
Cres |
|
|
2 |
|
nF |
| Parasitic collector-emitter inductance |
LCE |
|
|
|
20 |
nH |
| Turn-on delay time |
td(on) |
VCC=600V, IC=150A Rgon=Rgoff=7Ω
Tj=125℃, VGE=?5V |
|
125 |
|
ns |
| Rise time |
tr |
|
50 |
|
ns |
| Turn-off delay time |
td (off) |
|
620 |
|
ns |
| Fall time |
tf |
|
55 |
|
ns |
| Energy dissipation during turn-on time |
Eon |
|
18 |
|
mj |
| Energy dissipation during turn-off time |
Eoff |
|
15 |
|
|
| Reverse diode |
| Forward voltage |
VF |
IF=50A; VGE=0V; Tj=25(125)℃ |
|
2 (1.8) |
2.5 (1.9) |
V |
| Peak reverse recovery current |
IRRM |
IF=150A, VGE=0,-diF/dt=1200A/μs,
Tj=125℃, VR=600V |
|
125 |
|
A |
| Reverse recovery time |
trr |
|
200 |
|
nS |
| Thermal characteristics |
| IGBT thermal resistance junction to case |
Rth(j-c) |
per IGBT |
|
0.1 |
|
K/W |
| Rth(j-c)D |
per reverse diode |
|
0.23 |
|
K/W |
| Module thermal resistance case to heatsink |
Rth(c-s) |
per module |
|
0.03 |
|
K/W |
| Mechanical characteristics |
| Mounting torque |
M1 |
M6 |
3 |
|
6 |
NM |
| Ends juncture torque |
M2 |
M5 |
2.5 |
|
5 |
NM |
| Weight |
MAX |
|
324 |
|
|
g |
| Color |
|
|
White |
K/W |
| Dimensions |
MAX |
|
107.5x62x31 |
mm |
Dimensions
 | |
